Electrical resistivity measurements were performed on single crystals of URu2–
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x Osx Si2up tox = 0.28 under hydrostatic pressure up toP = 2 GPa. As the Os concentration,x , is increased, 1) the lattice expands, creating an effective negative chemical pressureP ch(x ); 2) the hidden-order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase; and 3) less external pressureP cis required to induce the HO→LMAFM phase transition. We compare the behavior of theT (x ,P ) phase boundary reported here for the URu2-x Osx Si2system with previous reports of enhanced HO in URu2Si2upon tuning withP or similarly in URu2–x Fex Si2upon tuning with positiveP ch(x ). It is noteworthy that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first-order transition to the LMAFM phase in URu2Si2. We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5f -electron and transition metald -electron states which leads to electronic instability in the paramagnetic phase and the concurrent formation of HO (and LMAFM) in URu2Si2. Calculations in the tight-binding approximation are included to determine the strength of hybridization between the U-5f -electron states and thed -electron states of Ru and its isoelectronic Fe and Os substituents in URu2Si2. -
Wei, Kaya ; Chen, Kuan-Wen ; Neu, Jennifer N. ; Lai, You ; Chappell, Greta L. ; Nolas, George S. ; Graf, David E. ; Xin, Yan ; Balicas, Luis ; Baumbach, Ryan E. ; et al ( , Physical Review Materials)